http://www .weitron.com.tw weitron B1020WS schottky diode 1.0 amperes 20 volts * ultra high-speed switching * very low forward voltage * voltage clampingprotection circuits. surface mount schottky barrie r diode features: 1/3 06-feb-09 le a d( p b)- f r ee p b d i m m i n m a x a b c d e h j k 1.60 1 . 8 0 1.15 1 . 3 5 0.80 1 . 0 0 0.25 0 . 4 0 0.15 r e f 0.00 0 . 1 0 0.089 0. 1 7 7 2.30 2 . 7 0 p i n 1 . c a t h o d e 2 . a n o d e millmeters sod-323 outline demensions * case: sod-323 4v-o * leads: solderable per mil-std-202, method 208 * polarity: cathode band * weight: 0.004 grams(approx.) mechanical data: unit:mm sod-323
weitron http://ww w .weitron.com.tw maximum ratings (t a =25c unless otherwise noted) characteristic thermal resistance junction to ambient symbol i fsm i o unit a a c/w operating temperature range t j -65 to +150 c c r ja 180 2 c/w 220 1 non-repetitve peak forward surge current 1.0 5.0 characteristic symbol continuous reverse voltage v r unit f o r w a r d v oltage i f =10ma i f =100ma i f =1000ma v - - - f mv v c apacitan c e be t w een t e r minals v r =5 v , f=1.0m h z c pf r e v erse c u r r e n t v r =5v v r =8v v r =15v i r a 270 350 550 10 20 25 electrical characteristics (t a =25?c unless otherwise noted) 240 300 480 5 7 50 10 19 20 d device marking item marking eqivalent ci r cuit diagram B1020WS v2 2 1 2/3 B1020WS 06-feb-09 value min typ max storage temperature range 1. device mounted on an fr4 printed-circuit board with cu clad 10x10mm. 2. device mounted on an fr4 printed-circuit board with cu clad 40x40mm t stg +125 operating ambient temperature range t amb c -65 to +125
weitron http://ww w .weitron.com.tw electrical characteristic curves(t a =25?c) 3/3 B1020WS 06-feb-09 0.6 0.2 4 . 0 0 v f (v) i f (ma) 10 3 10 2 10 1 10 - 1 fig.1 forward current as a function of forward t amb = 125 c t amb = 85 c t amb = 25 c 25 0 5 1 0 15 i r ( a) 20 v r (v) 10 5 10 4 10 3 10 2 10 1 fig.2 reverse current as a function of reverse t amb = 125 c t amb = 85 c t amb = 25 c 0 5 c d (pf) 0 2 0 1 80 60 20 0 40 15 v r (v) fig.3 diode capacitance as a function of reverse t amb = 25 c; f = 1 mhz.
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